Chalcogenide selectors for low voltage and high density memory applications

被引：0

作者：

Ambrosi, Elia ^{[1
]}

Wu, Cheng-Hsien ^{[1
]}

Kuo, Cheng-Chen ^{[1
]}

Hsu, Chen-Feng ^{[1
]}

Lee, Heng-Yuan ^{[1
]}

Lee, Tung-Ying ^{[1
]}

Bao, Xinyu ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, Corp Res, Hsinchu, Taiwan

来源：

2024 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI TSA | 2024年

关键词：

D O I：

10.1109/VLSITSA60681.2024.10546430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Threshold selectors are essential components to enable high density and BEOL compatible non- volatile memory. Breakthroughs at the material and device level are necessary to employ this technology in low voltage logic chips. In this paper, we review the development of low voltage selectors based on the SiNGeCTe (SNGCT) amorphous chalcogenide material. SNGCT devices exhibit excellent stability and performance along with low switching voltage and low leakage characteristics. Finally, the selector integration with STT-MRAM memory is described, showing remarkable device performance.

引用

页数：2

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