Chalcogenide selectors for low voltage and high density memory applications

被引：0

作者：

Ambrosi, Elia ^{[1
]}

Wu, Cheng-Hsien ^{[1
]}

Kuo, Cheng-Chen ^{[1
]}

Hsu, Chen-Feng ^{[1
]}

Lee, Heng-Yuan ^{[1
]}

Lee, Tung-Ying ^{[1
]}

Bao, Xinyu ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, Corp Res, Hsinchu, Taiwan

来源：

2024 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI TSA | 2024年

关键词：

D O I：

10.1109/VLSITSA60681.2024.10546430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Threshold selectors are essential components to enable high density and BEOL compatible non- volatile memory. Breakthroughs at the material and device level are necessary to employ this technology in low voltage logic chips. In this paper, we review the development of low voltage selectors based on the SiNGeCTe (SNGCT) amorphous chalcogenide material. SNGCT devices exhibit excellent stability and performance along with low switching voltage and low leakage characteristics. Finally, the selector integration with STT-MRAM memory is described, showing remarkable device performance.

引用

页数：2

共 50 条

[1] High-Density Nanopatterning of SiGeAsTe Chalcogenide as Ovonic Threshold Switch Selectors for Memory Applications
Kundu, Shreya
Garbin, Daniele
Devulder, Wouter
Donadio, Gabriele Luca
Lazzarino, Frederic
ACS APPLIED NANO MATERIALS, 2023, 6 (12) : 10668 - 10679
[2] Low variability high endurance and low voltage arsenic-free selectors based on GeCTe
Ambrosi, E.
Wu, C. H.
Lee, H. Y.
Chang, P. C.
Hsu, C. F.
Lee, C. M.
Chang, C. C.
Chen, Y. Y.
Heh, D. W.
Hou, D. H.
Liao, P. J.
Lee, T. Y.
Chang, M. F.
Wong, H-S P.
Bao, X. Y.
2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2021,
[3] An Ultrafast Nonvolatile Memory with Low Operation Voltage for High-Speed and Low-Power Applications
Zhang, Zhi-Cheng
Li, Yuan
Li, Jiaqiang
Chen, Xu-Dong
Yao, Bei-Wei
Yu, Mei-Xi
Lu, Tong-Bu
Zhang, Jin
ADVANCED FUNCTIONAL MATERIALS, 2021, 31 (28)
[4] A New Ultra- Low Voltage Metal Fuse for High Density OTP Applications
Wang, Li-Yu
Chen, Kuan-Ju
Yuh, Perng-Fei
Wang, Yih
Chang, Jonathan
King, Ya-Chin
Lin, Chrong Jung
2024 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI TSA, 2024,
[5] Voltage-Control Spintronics Memory Having Potentials for High-Density and High-Speed Applications
Yoda, Hiroaki
2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2018,
[6] Emerging Memory technologies for high density applications
Servalli, Giorgio
2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2017, : 156 - 159
[7] Sub-100 nm SBT films for low voltage and high density FeRAM applications
Narayan, S
Joshi, V
Mcmillan, L
De Araujo, CP
INTEGRATED FERROELECTRICS, 1999, 25 (1-4) : 509 - 517
[8] Selectors for High Density Crosspoint Memory Arrays: Design Considerations, Device Implementations and Some Challenges Ahead
Govoreanu, Bogdan
Zhang, Leqi
Jurczak, Malgorzata
2015 INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY (ICICDT), 2015,
[9] A prevenient voltage stress test method for high density memory
Yim, Jongsoo
Kim, Gunbae
Nam, Incheol
Son, Sangki
Lim, Jonghyoung
Lee, Hwacheol
Kang, Sangseok
Kwak, Byungheon
Lee, Jinseok
Kang, Sungho
DELTA 2008: FOURTH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRONIC DESIGN, TEST AND APPLICATIONS, PROCEEDINGS, 2008, : 516 - +
[10] HIGH-DENSITY BUBBLE MEMORY DEVICES AND APPLICATIONS
ORIHARA, S
IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (06) : 2732 - 2732

← 1 2 3 4 5 →