Surge Current Handling Capability of SiC FETs

被引：1
|
作者：
Li, Xueqing [1 ]
Losee, Pete [1 ]
Bhalla, Anup [1 ]
机构：
[1] Qorvo Inc, Power Device Solut, 650 Coll Rd East, Princeton, NJ 08540 USA
来源：
2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC | 2024年
关键词：
SiC FET; JFET; SSCB; surge current; time-current characteristics; protection circuits;
D O I：
10.1109/APEC48139.2024.10509110
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work investigates the surge current withstand and breaking capability of a 1200V-2mohm SiC FET. The device output characteristics, turn-off characteristics, and thermal impedance have been measured. An electro-thermal model has been constructed to determine the time-current characteristics of the device. The experimental results show that the device can reliably withstand and turn off a surge current more than 7 times of its continuous current rating at the maximum rated junction temperature. The excellent surge current handling capability proves that SiC FETs are excellent candidates for solid-state circuit protection applications.
引用
收藏
页码：1081 / 1086
页数：6
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