Surge Current Capability of SiC JFETs in AC Distribution Systems

被引:0
|
作者
Rodrigues, Rostan [1 ]
Zhang, Yuzhi [1 ]
Jiang, Taosha [1 ]
Cairoli, Pietro [1 ]
机构
[1] ABB Inc, Us Corp Res Ctr, Raleigh, NC 27606 USA
关键词
WBG semiconductor devices; SiC JFET; semiconductor device characterization; surge current; overload capability; solid state circuit breaker; AC electrical apparatus; temperature measurement; reverse conduction; gate current;
D O I
10.1109/wipda46397.2019.8998815
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Growing commercialization of SiC JFETs with low conduction losses is enabling their potential in non-traditional application spaces such as AC switchgear and controlgear. However, a key performance requirement such as surge current capability of these devices in AC circuits is generally not provided by their manufacturers in product documents. This paper presents the experimental validation of surge current capability of selected SiC JFETs for low voltage AC distribution system applications. Because AC electrical apparatus, such as power relays, contactors, and circuit breakers, have a different set of system parameters and requirements compared to traditional power converter applications, power semiconductor devices need to be validated for a different set of system requirements. In fact, robustness to inductive short circuit currents, inrush currents, short and long-time overload are some of the basic requirements for the utilization of WBG devices for these applications. In this paper, we compare the performance of different SiC JFETs under different types of AC waveform conditions.
引用
收藏
页码:187 / 194
页数:8
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