Large negative differential resistance effect induced by boron-doping in zigzag phagraphene nanoribbon junctions

被引：9
|
作者：
He, Jun [1 ,2 ]
Zhang, Lifu [1 ]
Fan, Zhi-Qiang [3 ]
Fan, Dianyuan [1 ]
机构：
[1] Shenzhen Univ, Coll Optoelect Engn, Int Collaborat Lab Mat Optoelect Sci & Technol 2D, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China
[2] Hunan Univ Technol, Sch Sci, Zhuzhou 412008, Peoples R China
[3] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Hunan, Peoples R China
来源：
AIP ADVANCES | 2018年 / 8卷 / 09期
基金：
中国国家自然科学基金;
关键词：
HYDROGEN TAUTOMERIZATION; CONDUCTANCE; TRANSPORT; RINGS;
D O I：
10.1063/1.5038945
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
By applying nonequilibrium Green's function in combination with the density-functional theory, we investigate the electronic transport properties of boron or nitrogen doped zigzag phagraphene nanoribbon junctions. Our calculated results show that the negative differential resistance effect could be observed in zigzag phagraphene nanoribbon junction. Moreover, the peak to valley ratio of the negative differential resistance significantly increase from 1.6 to 111.32, when the junction is doped by boron atoms. We rationalize the mechanism leading to negative differential resistance by providing a detailed analysis of transmission spectra and transmission pathways. (C) 2018 Author(s).
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页数：7
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