Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor

This article presents a theoretical study on the negative differential resistance (NDR) behavior of a bilaterally hydrogen-passivated Zigzag GeSe nanoribbon based single-gate field-effect transistor. It is focused on a 5-nm channel length device, and the study utilizes a simulation calculation that combines the density functional theory and non-equilibrium Green's function. In this study, a nitrogen atom is introduced as a substitutional dopant to replace the Ge atom in the source and drain regions of the GeSe field-effect transistor to created special symmetry structure. The numerical results demonstrate that the current peak-to-valley ratio (PVR) of the device can be effectively controlled by applying a gate voltage and up to 105 with the current peak value of 0.3 nA at room temperature (300 K). The device configuration described in this study meets the requirements of real-world industrial applications. These findings highlight the potential of GeSe Zigzag nanoribbon for future electronic device applications at nanoscale.