Interaction-induced negative differential resistance in asymmetric molecular junctions

被引:26
|
作者
Leijnse, M. [1 ]
Sun, W. [1 ,2 ]
Nielsen, M. Brondsted [3 ]
Hedegard, P. [1 ]
Flensberg, K. [1 ]
机构
[1] Univ Copenhagen, Niels Bohr Inst, Nanosci Ctr, DK-2100 Copenhagen O, Denmark
[2] Peking Univ, BNLMS, SKLSCSUS, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
[3] Univ Copenhagen, Dept Chem, DK-2100 Copenhagen O, Denmark
来源
JOURNAL OF CHEMICAL PHYSICS | 2011年 / 134卷 / 10期
关键词
ELECTRON-TRANSPORT; STATE; CONDUCTANCE;
D O I
10.1063/1.3560474
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Combining insights from quantum chemistry calculations with master equations, we discuss a mechanism for negative differential resistance (NDR) in molecular junctions, operated in the regime of weak tunnel coupling. The NDR originates from an interplay of orbital spatial asymmetry and strong electron-electron interaction, which causes the molecule to become trapped in a nonconducting state above a voltage threshold. We show how the desired asymmetry can be selectively introduced in individual orbitals in, e.g., oligo(phenyleneethynylene)-type molecules by functionalization with a suitable side group, which is in linear conjugation to one end of the molecule and cross-conjugated to the other end. (C) 2011 American Institute of Physics. [doi:10.1063/1.3560474]
引用
收藏
页数:7
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