Insights into High-Dose Helium Implantation of Silicon

被引：0
|
作者：
Aleksandrov, P. A. [1 ]
Emelyanova, O. V. [2 ]
Shemardov, S. G. [1 ]
Khmelenin, D. N. [2 ]
Vasiliev, A. L. [1 ,2 ]
机构：
[1] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia
[2] Kurchatov Inst, Shubnikov Inst Crystallog, Natl Res Ctr, Kurchatov Complex Crystallog & Photon, Moscow 119333, Russia
来源：
CRYSTALLOGRAPHY REPORTS | 2024年 / 69卷 / 03期
关键词：
SI; VOIDS; TEMPERATURE; CRYSTALS; CAVITIES; BUBBLES;
D O I：
10.1134/S1063774524600340
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The paper reports an analysis of surface morphology variation and cavity pattern formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 x 10(17) He+/cm(2) without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 x 10(17) He+/cm(2) and higher promotes flaking.
引用
收藏
页码：380 / 389
页数：10
相关论文
共 50 条
  • [21] PECULIARITIES IN THE MODELING OF HIGH-DOSE IMPLANTATION OF NITROGEN ON SILICON TARGETS
    SOBESLAVSKY, E
    SKORUPA, W
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 122 (01): : K19 - K24
  • [22] Microscopic Examination of the Silicon Surface Subjected to High-Dose Silver Implantation
    V. V. Vorob’ev
    A. M. Rogov
    Yu. N. Osin
    V. I. Nuzhdin
    V. F. Valeev
    K. B. Eidel’man
    N. Yu. Tabachkova
    M. A. Ermakov
    A. L. Stepanov
    Technical Physics, 2019, 64 : 195 - 202
  • [23] THERMAL REGROWTH OF SILICON AFTER HIGH-DOSE AR+ IMPLANTATION
    KALITZOVA, M
    DANESH, P
    SIMOV, S
    PASHOV, N
    BONHOMME, P
    BALOSSIER, G
    DJAKOV, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 17 (04): : 331 - 333
  • [24] SYNTHESIS OF SILICON DIOXIDE LAYERS BY HIGH-DOSE ION-IMPLANTATION
    GILL, SS
    RADIATION EFFECTS LETTERS, 1984, 85 (02): : 67 - 74
  • [25] PROPERTIES OF SOI STRUCTURES FORMED BY HIGH-DOSE OXYGEN IMPLANTATION INTO SILICON
    LU, DT
    LU, WX
    WANG, ZL
    DU, YC
    ZHENG, HD
    MO, D
    LIANG, ZN
    VACUUM, 1989, 39 (2-4) : 219 - 221
  • [26] Microscopic Examination of the Silicon Surface Subjected to High-Dose Silver Implantation
    Vorob'ev, V. V.
    Rogov, A. M.
    Osin, Yu. N.
    Nuzhdin, V. I.
    Valeev, V. F.
    Eidel'man, K. B.
    Tabachkova, N. Yu.
    Ermakov, M. A.
    Stepanov, A. L.
    TECHNICAL PHYSICS, 2019, 64 (02) : 195 - 202
  • [27] INSULATOR STRUCTURES OBTAINED BY HIGH-DOSE NITROGEN IMPLANTATION INTO ALUMINUM ON SILICON
    LIN, CL
    HEMMENT, PLF
    NEJIM, A
    ZHANG, JP
    LI, JH
    ZOU, SC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2): : 206 - 209
  • [28] Auger analysis of high-dose ion-implantation of arsenic in silicon
    Spasov, G.
    17TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON, AND ION TECHNOLOGIES (VEIT 2011), 2012, 356
  • [29] Surface cavities produced by high-dose nitrogen ion implantation into silicon
    Rudolphi, M.
    Markwitz, A.
    Baumann, H.
    SURFACE AND INTERFACE ANALYSIS, 2007, 39 (08) : 698 - 701
  • [30] THERMAL REGROWTH OF SILICON AFTER HIGH-DOSE Ar + IMPLANTATION.
    Kalitzova, M.
    Danesh, P.
    Simov, S.
    Pashov, N.
    Bonhomme, P.
    Balossier, G.
    Djakov, A.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B17 (04) : 331 - 333
12345