Auger analysis of high-dose ion-implantation of arsenic in silicon

被引：0
|
作者：
Spasov, G. [1 ]
机构：
[1] Bulgarian Acad Sci, Acad J Malinowski Inst Opt Mat & Technol, BU-1113 Sofia, Bulgaria
来源：
17TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON, AND ION TECHNOLOGIES (VEIT 2011) | 2012年 / 356卷
关键词：
ELECTRON SPECTROSCOPY;
D O I：
10.1088/1742-6596/356/1/012004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The paper deals with Auger electron spectroscopy (AES) analysis of high-dose ion-implantation of arsenic in silicon. Six profile distributions are obtained with doses covering uniformly the range 2x10(16) - 2x10(17) atoms/cm(2). The peak from the matrix (Si) is only monitored; it is assumed that the alteration in its intensity is due to the other element of the binary composition (As). This method of quantification is applicble to ion implantation. The profile depth is calibrated by Rutherford backscattering spectroscopy (RBS). The Ar ion (3 keV) sputtering rate depends weakly on the dose.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] THE MIGRATION OF THE DEFECTS INDUCED BY HIGH-DOSE ION-IMPLANTATION OF ARSENIC IN SILICON
    MARINESCU, R
    PRISECARU, S
    ALBU, R
    [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1992, 11 (08) : 488 - 489
  • [2] HIGH-DOSE URANIUM ION-IMPLANTATION INTO SILICON
    BROWN, IG
    GALVIN, JE
    YU, KM
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 31 (04): : 558 - 562
  • [3] HIGH-DOSE CARBON ION-IMPLANTATION STUDIES IN SILICON
    SRIKANTH, K
    CHU, M
    ASHOK, S
    NGUYEN, N
    VEDAM, K
    [J]. THIN SOLID FILMS, 1988, 163 : 323 - 329
  • [4] SYNTHESIS OF SILICON DIOXIDE LAYERS BY HIGH-DOSE ION-IMPLANTATION
    GILL, SS
    [J]. RADIATION EFFECTS LETTERS, 1984, 85 (02): : 67 - 74
  • [5] Analysis of the migration of the defects induced by high-dose ion implantation of arsenic in silicon
    Cernica, I
    Manea, E
    Dunare, C
    [J]. 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 2000, : 267 - 270
  • [6] HIGH-DOSE ARSENIC IMPLANTATION OF SILICON
    BUDINOV, HI
    KARPUZOV, DS
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 73 (03): : 352 - 356
  • [7] A COMPARISON OF BATCH AND SINGLE WAFER HIGH-DOSE ARSENIC ION-IMPLANTATION TECHNIQUES
    IRWIN, RB
    FILO, AJ
    KANNAN, VC
    FEYGENSON, A
    PREMATTA, RJ
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 40-1 : 547 - 549
  • [8] HIGH-DOSE ION-IMPLANTATION EFFECTS IN GLASSES
    KARGE, H
    MUHLE, R
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 65 (1-4): : 380 - 383
  • [9] SPECTROSCOPIC CHARACTERIZATION OF PHASES FORMED BY HIGH-DOSE CARBON ION-IMPLANTATION IN SILICON
    SERRE, C
    PEREZRODRIGUEZ, A
    ROMANORODRIGUEZ, A
    MORANTE, JR
    KOGLER, R
    SKORUPA, W
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 2978 - 2984
  • [10] AN INVESTIGATION OF PHASE-FORMATION BY HIGH-DOSE SILICON ION-IMPLANTATION INTO NICKEL
    RAO, Z
    WILLIAMS, JS
    POGANY, AP
    SOOD, DK
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 352 - 356
12345