Auger analysis of high-dose ion-implantation of arsenic in silicon

被引：0
|
作者：
Spasov, G. [1 ]
机构：
[1] Bulgarian Acad Sci, Acad J Malinowski Inst Opt Mat & Technol, BU-1113 Sofia, Bulgaria
来源：
17TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON, AND ION TECHNOLOGIES (VEIT 2011) | 2012年 / 356卷
关键词：
ELECTRON SPECTROSCOPY;
D O I：
10.1088/1742-6596/356/1/012004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The paper deals with Auger electron spectroscopy (AES) analysis of high-dose ion-implantation of arsenic in silicon. Six profile distributions are obtained with doses covering uniformly the range 2x10(16) - 2x10(17) atoms/cm(2). The peak from the matrix (Si) is only monitored; it is assumed that the alteration in its intensity is due to the other element of the binary composition (As). This method of quantification is applicble to ion implantation. The profile depth is calibrated by Rutherford backscattering spectroscopy (RBS). The Ar ion (3 keV) sputtering rate depends weakly on the dose.
引用
收藏
页数：5
相关论文
共 50 条
  • [21] A STUDY OF MOLECULAR ARSENIC ION-IMPLANTATION IN SILICON
    LIN, CL
    FANG, ZW
    ZHOU, W
    NI, RS
    ZOU, SC
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 384 - 386
  • [22] DUAL ARSENIC AND BORON ION-IMPLANTATION IN SILICON
    YOKOTA, K
    OKAMOTO, Y
    MIYASHITA, F
    HIRAO, T
    WATANABE, M
    SEKINE, K
    ANDO, Y
    MATSUDA, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7247 - 7251
  • [23] AMORPHIZATION PROCESSES STUDIED BY HIGH-DOSE ION-IMPLANTATION INTO METALS
    LINKER, G
    SEIDEL, A
    STREHLAU, B
    [J]. EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 244 - 246
  • [24] HIGH-DOSE NEUTRON GENERATION FROM PLASMA ION-IMPLANTATION
    UHM, HS
    LEE, WM
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (12) : 8056 - 8063
  • [25] THERMAL-WAVE MEASUREMENTS OF HIGH-DOSE ION-IMPLANTATION
    TAYLOR, M
    HURLEY, K
    LEE, K
    LEMERE, M
    OPSAL, J
    OBRIEN, T
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 725 - 729
  • [26] THE SYNTHESIS OF TELLURIUM OXIDE BY HIGH-DOSE OXYGEN ION-IMPLANTATION
    SINGH, A
    KNYSTAUTAS, EJ
    LAPOINTE, R
    [J]. APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY): : 681 - 685
  • [27] HIGH-DOSE ION-IMPLANTATION IN YTTRIA-STABILIZED ZIRCONIA
    SCHOLTEN, D
    BURGGRAAF, AJ
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1986, 97 (3-4): : 191 - 197
  • [28] HIGH-DOSE ION-IMPLANTATION OF CERAMICS - BENEFITS AND LIMITATIONS FOR TRIBOLOGY
    BULL, SJ
    PAGE, TF
    [J]. JOURNAL OF MATERIALS SCIENCE, 1988, 23 (12) : 4217 - 4230
  • [29] On the high-dose effect in the case of ion implantation of silicon
    D. I. Tetelbaum
    A. I. Gerasimov
    [J]. Semiconductors, 2004, 38 : 1260 - 1262
  • [30] On the high-dose effect in the case of ion implantation of silicon
    Tetelbaum, DI
    Gerasimov, AI
    [J]. SEMICONDUCTORS, 2004, 38 (11) : 1260 - 1262
12345