THE MIGRATION OF THE DEFECTS INDUCED BY HIGH-DOSE ION-IMPLANTATION OF ARSENIC IN SILICON

被引：0
|
作者：
MARINESCU, R
PRISECARU, S
ALBU, R
机构：
[1] Microelectronica-Bucharest, Bucharest, 72996
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1992年 / 11卷 / 08期
关键词：
D O I：
10.1007/BF00731113
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：488 / 489
页数：2
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