INSULATOR STRUCTURES OBTAINED BY HIGH-DOSE NITROGEN IMPLANTATION INTO ALUMINUM ON SILICON

Aluminium films with various thicknesses from 4500 to 15000 angstrom were deposited on single crystal [100] Si wafers and 200 keV nitrogen ions, with doses ranging from 5 x 10(17) to 1.8 x 10(18) N/cm2, were implanted into the deposited layers. The synthesised AlN structures have been evaluated by RBS and channelling, FTIR, X-ray diffraction and spreading resistance methods. The formation of a buried insulating layer of thickness 3000 angstrom consisting of stoichiometric AlN has been achieved and the evolution of the implanted nitrogen has been successfully modelled for samples implanted with 1.68 x 10(18) N/cm2 and annealed above 400-degrees-C for one hour.