Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET

High critical field (Ec) and low specific ON-resistance (RON) beta-Ga(2)O(3 )devices such as accumulationchannel metal-oxide-semiconductor field-effect-transistors(MOSFET) have been reported for high-power and extremeenvironment applications. Channel carrier mobility is acritical factor to reduceRON, but a lack of studies on channel mobility in beta-Ga2O3 MOSFETs hinders understandingthe electrical characteristics. We study carrier mobility inthe channels with various doping concentrations using MOS-gated Hall measurements. Our MOSFET achieves arecord-high peak channel mobility (mu peak) of 143 cm2/V<middle dot>s,to the best of our knowledge. Moreover, we suggest that further improvements can be made by enhancing Coulombscattering-limited mobility (mu C)