Electrical properties of heavily Sn-doped (AlGa)2O3 layers on β-Ga2O3 (010) substrates

被引：0
|
作者：
Okumura, Hironori [1 ]
机构：
[1] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / 06期
关键词：
Hetero-epitaxial growth; molecular-beam epitaxy; Gallium Oxide; critical layer thickness; Hall-effect measurement;
D O I：
10.35848/1347-4065/ac0418
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the critical layer thickness for (AlGa)(2)O-3 hetero-epitaxial growth on beta-Ga2O3 (010) substrates via plasma-assisted molecular-beam epitaxy and on the electrical properties of heavily tin-doped (AlGa)(2)O-3 layers. The aluminum composition in the (AlGa)(2)O-3 layers was reproducibly controlled within 19% by changing aluminum fluxes. We achieved the pseudomorphic growth of the 1050 nm thick (Al0.12Ga0.88)(2)O-3 and 420 nm thick (Al0.15Ga0.85)(2)O-3 layers on beta-Ga2O3 (010) substrates. The electron concentration, contact resistivity, and sheet resistance of the (Al0.10Ga0.90)(2)O-3 layer with a tin concentration of 4 x 10(19) cm(-3) were 1 x 10(18) cm(-3), 3 x 10(-5) omega cm(2), and 9 x 10(2) omega/rectangle, respectively.
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页数：5
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