Prospects of mist CVD for fabrication of β-Ga2O3 MESFETs on β-Ga2O3 (010) substrates

被引：4

作者：

Takane, Hitoshi ^{[1
]}

Ando, Yuji ^{[2
,3
]}

Takahashi, Hidemasa ^{[3
]}

Makisako, Ryutaro ^{[3
]}

Ikeda, Hikaru ^{[4
]}

Ueda, Tetsuzo ^{[5
]}

Suda, Jun ^{[2
,3
]}

Tanaka, Katsuhisa ^{[1
]}

Fujita, Shizuo ^{[4
]}

Sugaya, Hidetaka ^{[6
]}

机构：

[1] Kyoto Univ, Dept Mat Chem, Kyoto 6158510, Japan

[2] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya 4648601, Japan

[3] Nagoya Univ, Dept Elect, Nagoya 4648601, Japan

[4] Kyoto Univ, Acad Collaborat Innovat, Off Soc, Kyoto 6068501, Japan

[5] Panason Ind Co Ltd, Kadoma 5718506, Japan

[6] Panasonic Corp, Living Appliances & Solut Co, Tokyo 1058301, Japan

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 08期

关键词：

mist CVD; MESFET; beta-Ga2O3; homoepitaxial growth; THIN-FILMS; HOMOEPITAXIAL GROWTH; SINGLE-CRYSTALS; KV BREAKDOWN; MOBILITY; LAYERS;

D O I：

10.35848/1882-0786/acefa5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mist CVD was applied to grow the ss-Ga2O3 channel layer of a MESFET on a semi- insulating ss-Ga(2)o(3) (010) substrate. The mobility and carrier concentration of the channel layer were 80 cm(2) V-1 s(-1) and 6.2 x 10(17) cm(-3), respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of -9 V, and the maximum drain current was 240 mA mm(-1). The maximum transconductance was 46 mS mm(-1) and the onresistance was 30 Omega mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future. (c) 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd

引用

页数：4

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