Coherent growth of β-(Al x Ga1-x )2O3 alloy thin films on (010) β-Ga2O3 substrates using mist CVD

Herein, we demonstrate beta-(Al x Ga1-x )(2)O-3 thin films that were coherently grown on a (010) beta-Ga2O3 substrate using mist chemical vapor deposition (CVD). X-ray diffraction and reciprocal space mapping results revealed that the beta-(Al x Ga1-x )(2)O-3 thin films were of high-crystalline quality and were grown coherently to attain an Al content of 18.3% as measured by Rutherford backscattering spectroscopy. Importantly, based on their surface morphologies, the coherently grown beta-(Al x Ga1-x )(2)O-3 thin films have atomically flat surfaces. These results indicate that mist CVD is a promising technique for beta-(Al x Ga1-x )(2)O-3/beta-Ga2O3 heterojunction devices.