Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET

被引：4

作者：

Kuk, Song-Hyeon ^{[1
]}

Choi, Seongjun ^{[1
]}

Kim, Hyeong Yun ^{[2
]}

Ko, Kyul ^{[3
]}

Jeong, Jaeyong ^{[1
]}

Geum, Dae-Myeong ^{[4
]}

Han, Jae-Hoon ^{[3
]}

Park, Ji-Hyeon ^{[2
]}

Jeon, Dae-Woo ^{[2
]}

Kim, Sang-Hyeon ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea

[2] Korea Inst Ceram Engn & Technol, Jinju 52851, South Korea

[3] Korea Inst Sci & Technol KIST, Seoul 02792, South Korea

[4] Chungbuk Natl Univ, Sch Semicond Engn, Cheongju 28644, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

Scattering; MOSFET; Logic gates; Voltage measurement; Magnetic field measurement; Temperature measurement; Doping; Channel mobility; hall measurement; power metal-oxide-semiconductor field-effect-transistors (MOSFET); specific ON-resistance; ELECTRON-SCATTERING MECHANISMS; INVERSION LAYER MOBILITY; SI MOSFETS; UNIVERSALITY;

D O I：

10.1109/TED.2024.3381916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High critical field (Ec) and low specific ON-resistance (RON) beta-Ga(2)O(3 )devices such as accumulationchannel metal-oxide-semiconductor field-effect-transistors(MOSFET) have been reported for high-power and extremeenvironment applications. Channel carrier mobility is acritical factor to reduceRON, but a lack of studies on channel mobility in beta-Ga2O3 MOSFETs hinders understandingthe electrical characteristics. We study carrier mobility inthe channels with various doping concentrations using MOS-gated Hall measurements. Our MOSFET achieves arecord-high peak channel mobility (mu peak) of 143 cm2/V<middle dot>s,to the best of our knowledge. Moreover, we suggest that further improvements can be made by enhancing Coulombscattering-limited mobility (mu C)

引用

页码：3429 / 3432

页数：4

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