Study on Junction Temperature Detection Model Based on Turn-on and-off Delay Time of IGBT Modules in Wind Power Converters

被引:0
|
作者
Yao, Fang [1 ]
Ma, Jing [1 ]
Zhang, Yushuo [2 ]
Tang, Shengxue [1 ]
Huang, Kai [1 ]
Li, Zhigang [1 ]
机构
[1] State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin,300130, China
[2] Experimental Training Center, Hebei University of Technology, Tianjin,300130, China
关键词
615.8 Wind Power (Before 1993; use code 611 ) - 701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 944.6 Temperature Measurements;
D O I
暂无
中图分类号
学科分类号
摘要
Junction temperature
引用
收藏
页码:862 / 870
相关论文
共 50 条
  • [31] Development of a Hardware Simulator for Reliable Design of Modular Multilevel Converters Based on Junction-Temperature of IGBT Modules
    Jo, Seung-Rae
    Kim, Seok-Min
    Cho, Sungjoon
    Lee, Kyo-Beum
    ELECTRONICS, 2019, 8 (10)
  • [32] Study on Effect of Junction Temperature Swing Duration on Lifetime of Transfer Molded Power IGBT Modules
    Choi, Ui-Min
    Blaabjerg, Frede
    Jorgensen, Soren
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2017, 32 (08) : 6434 - 6443
  • [33] Study on the junction temperature simulation and detection method of IGBT power electronic devices
    Chen, Ming
    Hu, An
    Dianji yu Kongzhi Xuebao/Electric Machines and Control, 2011, 15 (12): : 44 - 49
  • [34] Comparison of UCE- and RGi- based Junction Temperature Measurement of Multichip IGBT Power Modules
    Denk, Marco
    Bakran, Mark-M.
    2015 17TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'15 ECCE-EUROPE), 2015,
  • [35] Robust On-line Junction Temperature Estimation of IGBT Power Modules based on Von during PWM Power Cycling
    Degrenne, N.
    Mollov, S.
    2019 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP), 2019, : 107 - 116
  • [36] Study on Junction Temperature Measurement of SiC Schottky Barrier Diode Based on Turn-on-Delay Time Estimation
    Wang, Xun
    Feng, Shiwei
    Li, Jingwei
    Shi, Bangbing
    2017 2ND IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM), 2017, : 178 - 181
  • [37] In-Operation Junction Temperature Extraction for Cascode GaN Devices Based on Turn-Off Delay
    Lu, Zhebie
    Iannuzzo, Francesco
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (04) : 4735 - 4745
  • [38] Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model
    Igic, PM
    Mawby, PA
    Towers, MS
    Jamal, W
    Batcup, S
    MICROELECTRONICS RELIABILITY, 2002, 42 (07) : 1045 - 1052
  • [39] A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off
    Sundaramoorthy, V. K.
    Bianda, E.
    Bloch, R.
    Angelosante, D.
    Nistor, I.
    Zurfluh, F.
    Knapp, G.
    Heinemann, A.
    MICROELECTRONICS RELIABILITY, 2014, 54 (11) : 2423 - 2431
  • [40] A Junction Temperature Monitoring Method for Power Devices Based on Turn-on Collector-Emitter Voltage Drop Platform
    Wang, Huimin
    Xu, Zhiliang
    Ding, Juxia
    Ge, Xinglai
    Wang, Yi
    Diangong Jishu Xuebao/Transactions of China Electrotechnical Society, 2024, 39 (15): : 4682 - 4696