Study on Junction Temperature Detection Model Based on Turn-on and-off Delay Time of IGBT Modules in Wind Power Converters

被引：0
|
作者：
Yao, Fang [1 ]
Ma, Jing [1 ]
Zhang, Yushuo [2 ]
Tang, Shengxue [1 ]
Huang, Kai [1 ]
Li, Zhigang [1 ]
机构：
[1] State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin,300130, China
[2] Experimental Training Center, Hebei University of Technology, Tianjin,300130, China
来源：
Tianjin Daxue Xuebao (Ziran Kexue yu Gongcheng Jishu Ban)/Journal of Tianjin University Science and Technology | 2019年 / 52卷 / 08期
关键词：
615.8 Wind Power (Before 1993; use code 611 ) - 701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 944.6 Temperature Measurements;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Junction temperature
引用
收藏
页码：862 / 870
相关论文
共 50 条
  • [21] Online Junction Temperature Extraction for Cascode GaN Devices Based on Turn-On Delay
    Lu, Zhebie
    Iannuzzo, Francesco
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (08) : 10250 - 10260
  • [22] Active Junction Temperature Control of IGBT Based on Adjusting the Turn-off Trajectory
    Wang, Bo
    Zhou, Luowei
    Zhang, Yi
    Wang, Kaihong
    Du, Xiong
    Sun, Pengju
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (07) : 5811 - 5823
  • [23] Nondestructive and accurate prediction of IGBT junction temperature in wind power converters: based on IDMOA-ELM prediction method
    Liu, Jiaqi
    Li, Lingling
    Liu, Yuwei
    NONDESTRUCTIVE TESTING AND EVALUATION, 2024,
  • [24] Online Junction Temperature Monitoring Using Turn-Off Delay Time for Silicon Carbide Power Devices
    Zhang, Zheyu
    Wang, Fred
    Costinett, Daniel J.
    Tolbert, Leon M.
    Blalock, Benjamin J.
    Wu, Xuanlyu
    2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2016,
  • [25] A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction
    Shao, Lingfeng
    Xu, Guoqing
    Li, Pengbo
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2022, 10 : 3 - 12
  • [26] A Novel Bond Wire Fault Detection Method for IGBT Modules Based on Turn-on Gate Voltage Overshoot
    Yang, Yanyong
    Zhang, Pinjia
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (07) : 7501 - 7512
  • [27] In Situ Monitoring Chip Failure in Multichip IGBT Modules Using Turn-On Delay Time Extracted From Auxiliary Emitter Voltage
    Yang, Jianxiong
    Che, Yanbo
    Guo, Xiaojiang
    Ran, Li
    Chen, Yijing
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2024, 12 (03) : 2912 - 2922
  • [28] Temperature Dependence of the Turn-On Delay Time of High-Power Lasers-Thyristors
    Soboleva, O. S.
    Podoskin, A. A.
    Golovin, V. S.
    Gavrina, P. S.
    Zolotarev, V. V.
    Pikhtin, N. A.
    Slipchenko, S. O.
    Bagaev, T. A.
    Ladugin, M. A.
    Marmalyuk, A. A.
    Simakov, V. A.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (04) : 1827 - 1830
  • [29] Online Junction Temperature Monitoring of Wide Bandgap Power Transistors using Quasi Turn-on Delay as TSEP
    Sharma, Kanuj
    Baron, Kevin Munoz
    Ruthardt, Johannes
    Kallfass, Ingmar
    2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2021, : 129 - 134
  • [30] A System Level Approach for Online Junction Temperature Measurement of SiC MOSFETs Using Turn-On Delay Time
    Yang, Fei
    Pu, Shi
    Xu, Chi
    Akin, Bilal
    2020 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE & EXPO (ITEC), 2020, : 1012 - 1017
12345