A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off

被引：23
|
作者：
Sundaramoorthy, V. K. [1 ]
Bianda, E. [1 ]
Bloch, R. [1 ]
Angelosante, D. [1 ]
Nistor, I. [1 ]
Zurfluh, F. [1 ]
Knapp, G. [2 ]
Heinemann, A. [2 ]
机构：
[1] ABB Switzerland Ltd, Corp Res, CH-5405 Baden, Switzerland
[2] ABB Switzerland Ltd, Business Unit Power Convers, CH-5300 Turgi, Switzerland
来源：
MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 11期
关键词：
IGBT; Junction temperature; Lifetime estimation; Temperature-sensitive electrical parameters; Gate-emitter voltage; Miller plateau; POWER; DEVICES; MODEL;
D O I：
10.1016/j.microrel.2014.06.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel method is presented for online estimation of the junction temperature (Tj) of semiconductor chips in IGBT modules, based on evaluating the gate-emitter voltage (Vge) during the IGBT switch off process. It is shown that the Miller plateau width (in the Vge waveform) depend linearly on the junction temperature of the IGBT chips. Hence, a method can be proposed for estimating the junction temperature even during converter operation - without the need of additional thermal sensors or complex Rth network models. A measurement circuit was implemented at gate level to measure the involved time duration and its functionality was demonstrated for different types of IGBT modules. A model has been proposed to extract Tj from Vge measurements. Finally, an IGBT module with semiconductor chips at two different temperatures has been measured using Vge method and this method was found to provide the average junction temperature of all the semiconductor chips. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2423 / 2431
页数：9
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