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Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC schottky barrier diodes

被引：0
|
作者：
Latreche, Abdelhakim [1 ]
机构：
[1] Département des sciences de la matière, Université de Bordj Bou Arreridj, Algeria
来源：
Semiconductor Physics, Quantum Electronics and Optoelectronics | 2019年 / 22卷 / 01期
关键词：
33;
D O I：
10.15407/spqeo22.01.019
中图分类号：
学科分类号：
摘要：
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页码：19 / 25
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