Effect of Schottky annealing temperature on reverse leakage current of 6500 V 4H-SiC JBS diodes

被引：3

作者：

Niu, Xiping ^{[1
]}

Wei, Xiaoguang ^{[1
]}

An, Yunlai ^{[1
]}

Sang, Ling ^{[1
]}

Wu, Peifei ^{[1
]}

Zhou, Yang ^{[1
]}

Sun, Botao ^{[2
]}

Zhang, Wenting ^{[1
]}

Liu, Rui ^{[1
]}

Du, Zechen ^{[1
]}

Li, Chenmeng ^{[1
]}

Shen, Zhanwei ^{[3
]}

Yang, Tongtong ^{[1
]}

Luo, Weixia ^{[1
]}

Tian, Yan ^{[1
]}

Yang, Fei ^{[1
]}

机构：

[1] Beijing Inst Smart Energy, State Key Lab Adv Power Transmiss Technol, Beijing 102209, Peoples R China

[2] Beijing Century Goldray Semicond Co Ltd, Beijing 100176, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2023年 / 608卷

关键词：

A1; 4H-SiC; A2; JBS; A3; Diodes; B1; Temperature; B2; Schottky Barrier; B3; Reverse Leakage Current;

D O I：

10.1016/j.jcrysgro.2023.127103

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Annealing treatment has an important effect on the electrical properties of Schottky diodes. In this paper, the effect of Schottky annealing temperature on reverse leakage current of 6500 V 4H-SiC JBS diodes was studied. The reverse leakage current of the diode annealed at 500 degrees C is higher than that of the diode annealed at 450 degrees C. This is because the Schottky barrier height of the diode annealed at 500 degrees C is decreased by 0.08 eV, which leads to a large reverse leakage current. Meanwhile, the Schottky barrier height of the diode annealed at 500 degrees C is decreased more significantly with the increase of measurement temperature, therefore the reverse leakage current increases significantly.

引用

页数：4

共 50 条

[1] Influence of annealing on reverse current of 4H-SiC Schottky diodes
Sochacki, M
Szmidt, J
Bakowski, M
Werbowy, A
[J]. DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 1263 - 1267
[2] Leakage currents in 4H-SiC JBS diodes
P. A. Ivanov
I. V. Grekhov
A. S. Potapov
O. I. Kon’kov
N. D. Il’inskaya
T. P. Samsonova
O. Korol’kov
N. Sleptsuk
[J]. Semiconductors, 2012, 46 : 397 - 400
[3] Leakage currents in 4H-SiC JBS diodes
Ivanov, P. A.
Grekhov, I. V.
Potapov, A. S.
Kon'kov, O. I.
Il'inskaya, N. D.
Samsonova, T. P.
Korol'kov, O.
Sleptsuk, N.
[J]. SEMICONDUCTORS, 2012, 46 (03) : 397 - 400
[4] Effect of P plus region design on the fabrication of 6500 V 4H-SiC JBS diodes
Sang, Ling
Tian, Lixin
Li, Jialin
Niu, Yingxi
Jin, Rui
[J]. JOURNAL OF CRYSTAL GROWTH, 2020, 530
[5] Conduction mechanisms of the reverse leakage current of 4H-SiC Schottky barrier diodes
Latreche, A.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (02)
[6] Effect of overlap region for schottky metal and field oxide on the electrical characteristics of 6500 V/50A 4H-SiC JBS diodes
Niu, Xiping
Sang, Ling
An, Yunlai
Wu, Peifei
Zhang, Wenting
Liu, Rui
Du, Zechen
Li, Chenmeng
Wei, Xiaoguang
Yang, Fei
[J]. JOURNAL OF CRYSTAL GROWTH, 2023, 603
[7] Effect of crystallographic defects on the reverse performance of 4H-SiC JBS diodes
Grekov, A.
Zhang, Qingchun
Fatima, Husna
Agarwal, Anant
Sudarshan, T.
[J]. MICROELECTRONICS RELIABILITY, 2008, 48 (10) : 1664 - 1668
[8] 1500 V, 4 amp 4H-SiC JBS diodes
Singh, R
Ryu, SH
Palmour, JW
Hefner, AR
Lai, JS
[J]. 12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS, 2000, : 101 - 104
[9] Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
Ivanov, P. A.
Grekhov, I. V.
Potapov, A. S.
Il'inskaya, N. D.
Kon'kov, O. I.
Samsonova, T. P.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 877 - 880
[10] Experimental 4H-SiC junction-barrier Schottky (JBS) diodes
P. A. Ivanov
I. V. Grekhov
A. S. Potapov
N. D. Il’inskaya
T. P. Samsonova
O. I. Kon’kov
[J]. Semiconductors, 2009, 43 : 1209 - 1212

← 1 2 3 4 5 →