Effect of crystallographic defects on the reverse performance of 4H-SiC JBS diodes

被引：19
|
作者：
Grekov, A. [1 ]
Zhang, Qingchun [2 ]
Fatima, Husna [2 ]
Agarwal, Anant [2 ]
Sudarshan, T. [1 ]
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] CREE Inc, Durham, NC 27703 USA
来源：
MICROELECTRONICS RELIABILITY | 2008年 / 48卷 / 10期
关键词：
D O I：
10.1016/j.microrel.2008.05.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A quantitative analysis of the effect of crystallographic defects on the performance of 4H-SiC junction barrier Schottky (JBS) diodes was performed. It has been shown that higher leakage current in diodes is associated with a greater number of elementary screw dislocations. Further, threading dislocation pair arrays were observed in some of the fabricated devices and, for the first time, the role of such defects on JBS reverse leakage currents is investigated. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1664 / 1668
页数：5
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