On-current modeling of short-channel double-gate(DG) MOSFETs with a vertical Gaussian-like doping profile

被引：0

作者：

Sarvesh Dubey ^{[1
]}

Pramod Kumar Tiwari ^{[2
]}

SJit ^{[1
]}

机构：

[1] Department of Electronics Engineering,Indian Institute of Technology(BHU),Varanasi-,India

[2] Department of Electronics and Communication Engineering,National Institute of Technology

来源：

Journal of Semiconductors | 2013年 / 34卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TN386.1 [金属-氧化物-半导体（MOS）器件];

学科分类号：

摘要：

<正>An analytic drain current model is presented for doped short-channel double-gate MOSFETs with a Gaussian-like doping profile in the vertical direction of the channel.The present model is valid in linear and saturation regions of device operation.The drain current variation with various device parameters has been demonstrated. The model is made more physical by incorporating the channel length modulation effect.Parameters like transconductance and drain conductance that are important in assessing the analog performance of the device have also been formulated.The model results are validated by numerical simulation results obtained by using the commercially available ATLASTM,a two dimensional device simulator from SILVACO.

引用

页码：46 / 53

页数：8

共 50 条

[21] Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness
Kobayashi, Yusuke
Kakushima, Kuniyuki
Ahmet, Parhat
Rao, V. Ramgopal
Tsutsui, Kazuo
Iwai, Hiroshi
MICROELECTRONICS RELIABILITY, 2010, 50 (03) : 332 - 337
[22] DICE: A beneficial short-channel effect in nanoscale double-gate MOSFETs
Chouksey, Siddharth
Fossum, Jerry G.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (03) : 796 - 802
[23] A general physical model for short-channel double-gate SOI MOSFETS
Li, ZM
Woo, JCS
1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 86 - 87
[24] Compact subthreshold slope modelling of short-channel double-gate MOSFETs
Monga, U.
Fjeldly, T. A.
ELECTRONICS LETTERS, 2009, 45 (09) : 476 - 477
[25] A RIGOROUS ANALYTICAL MODEL FOR SHORT-CHANNEL JUNCTIONLESS DOUBLE-GATE MOSFETS
Jiang, Chunsheng
Liang, Renrong
Wang, Jing
Xu, Jun
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[26] Physics based current and capacitance modeling of short-channel Double Gate MOSFETs
Borli, Hakon
Kolberg, Sigbjorm
Fjeldly, Tor A.
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 447 - 448
[27] Compact Subthreshold Current Modeling of Short-Channel Nanoscale Double-Gate MOSFET
Monga, Udit
Fjeldly, Tor A.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (07) : 1533 - 1537
[28] Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects
Munteanu, D.
Autran, J. L.
Loussier, X.
Harrison, S.
Cerutti, R.
MOLECULAR SIMULATION, 2007, 33 (07) : 605 - 611
[29] An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs
Agnihotri, Harshit
Ranjan, Abhishek
Tiwari, Pramod Kumar
Jit, S.
2011 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI), 2011, : 327 - 328
[30] Threshold Voltage Modeling of Short-Channel DG MOSFETs with Non-Uniform Doping in the Vertical Direction
Kumar, Sanjay
Goel, Ekta
Rawat, Gopal
Singh, Kunal
Kumar, Mirgender
Dubey, Sarvesh
Jit, S.
PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 263 - 266

← 1 2 3 4 5 →