On-current modeling of short-channel double-gate(DG) MOSFETs with a vertical Gaussian-like doping profile

被引：0
|
作者：
Sarvesh Dubey [1 ]
Pramod Kumar Tiwari [2 ]
SJit [1 ]
机构：
[1] Department of Electronics Engineering,Indian Institute of Technology(BHU),Varanasi-,India
[2] Department of Electronics and Communication Engineering,National Institute of Technology
来源：
Journal of Semiconductors | 2013年 / 34卷 / 05期
关键词：
D O I：
暂无
中图分类号：
TN386.1 [金属-氧化物-半导体（MOS）器件];
学科分类号：
摘要：
<正>An analytic drain current model is presented for doped short-channel double-gate MOSFETs with a Gaussian-like doping profile in the vertical direction of the channel.The present model is valid in linear and saturation regions of device operation.The drain current variation with various device parameters has been demonstrated. The model is made more physical by incorporating the channel length modulation effect.Parameters like transconductance and drain conductance that are important in assessing the analog performance of the device have also been formulated.The model results are validated by numerical simulation results obtained by using the commercially available ATLASTM,a two dimensional device simulator from SILVACO.
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页码：46 / 53
页数：8
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