CALCULATED TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON INVERSION-LAYERS

被引：250

|

作者：

STERN, F

机构：

来源：

PHYSICAL REVIEW LETTERS | 1980年 / 44卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.44.1469

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

下载

收藏

页码：1469 / 1472

页数：4

相关论文

共 50 条

[41] THE WIGNER GLASS AND CONDUCTANCE OSCILLATIONS IN SILICON INVERSION-LAYERS
PEPPER, M
UREN, MJ
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (20): : L617 - L625
[42] ELECTRON ELECTRON-SCATTERING IN SILICON INVERSION-LAYERS
DAVIES, RA
PEPPER, M
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (12): : L353 - L360
[43] VALLEY DEGENERACY AND INTERSUBBAND SPECTROSCOPY IN SILICON INVERSION-LAYERS
COLE, T
SURFACE SCIENCE, 1982, 113 (1-3) : 41 - 49
[44] NOVEL METHOD FOR PRODUCING NANOSTRUCTURES IN SILICON INVERSION-LAYERS
CAMPBELL, BE
HUANG, X
BERNSTEIN, GH
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03): : 1135 - 1138
[45] PHONON-ELECTRON INTERACTION IN SILICON INVERSION-LAYERS
ZAVARITSKII, NV
KVON, ZD
JETP LETTERS, 1983, 38 (03) : 97 - 100
[46] DEPENDENCE OF ACTIVATION-ENERGY ON SUBBAND SPLITTING AND MAGNETIC-FIELD IN SILICON INVERSION-LAYERS
POPOVIC, D
FANG, FF
STILES, PJ
SOLID STATE COMMUNICATIONS, 1988, 68 (01) : 25 - 28
[47] ANALYSIS OF TEMPERATURE-DEPENDENT HALL CONDUCTIVITY IN SILICON INVERSION-LAYERS IN STRONG MAGNETIC-FIELDS BY A MOBILITY EDGE MODEL
KAWAJI, S
WAKABAYASHI, JI
MORIYAMA, J
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (12) : 3839 - 3840
[48] PRESSURE-DEPENDENCE OF STRUCTURE IN MOBILITY OF (100) SILICON INVERSION LAYERS
GESCH, H
EISELE, I
DORDA, G
SURFACE SCIENCE, 1978, 73 (01) : 81 - 89
[49] PLASMONS IN INVERSION-LAYERS
THEIS, TN
SURFACE SCIENCE, 1980, 98 (1-3) : 515 - 532
[50] TEMPERATURE-DEPENDENCE OF CYCLOTRON-RESONANCE IN ELECTRON INVERSION LAYERS ON SI
KOTTHAUS, JP
KUBLBECK, H
SURFACE SCIENCE, 1976, 58 (01) : 199 - 201

← 1 2 3 4 5 →