CALCULATED TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON INVERSION-LAYERS

被引：250

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作者：

STERN, F

机构：

来源：

PHYSICAL REVIEW LETTERS | 1980年 / 44卷 / 22期

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D O I：

10.1103/PhysRevLett.44.1469

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：1469 / 1472

页数：4

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