NEGATIVE MAGNETORESISTANCE IN SILICON(100) MOS INVERSION-LAYERS

被引：123

作者：

KAWAGUCHI, Y ^{[1
]}

KAWAJI, S ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHMA KU,TOKYO 171,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1980年 / 48卷 / 02期

关键词：

D O I：

10.1143/JPSJ.48.699

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：699 / 700

页数：2

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[1] NEGATIVE MAGNETORESISTANCE IN ANDERSON LOCALIZATION OF SI MOS INVERSION-LAYERS
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