Low-Power and High-Frequency 14-nm In0.53Ga0.47As Vertical Rectangular Gate-All-Around MOSFETs

被引：2
|
作者：
Khaouani, Mohammed [1 ,2 ]
机构：
[1] Aboubekr Belkaid Univ, Dept Elect Engn, Tilimsen 13000, Algeria
[2] Unit Res Mat & Renewable Energies, Tilimsen, Algeria
来源：
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2018年 / 19卷 / 05期
关键词：
MOSFETs; GAA; TCAD; DIBL; V-th; SS;
D O I：
10.1007/s42341-018-0046-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a high-mobility 14-nm channel length In0.53Ga0.47As vertical rectangular gate-all-around (GAA) MOSFET that we simulated with Silvaco TCAD in DevEdit 3D and Atlas for using these devices with low power. We obtained a threshold voltage V-th of 25mV; therefore, a subthreshold slope (SS) and drain-induced barrier lowering (DIBL) as low as 78 and 45mV/V have been demonstrated, indicating excellent interface quality and stability. A transconductance (g(m)) equal to 1.5ms/mu m, high frequency of 900GHz for a great InGaAs GAA, record high I-ON/I-OFF of over 2.5x10(6), and minimum I-OFF=0.21 pA/mu m have been obtained. These devices can be used for low-power logic and high-frequency applications.
引用
收藏
页码：337 / 343
页数：7
相关论文
共 25 条
  • [11] Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
    Ram, Mamidala Saketh
    Svensson, Johannes
    Skog, Sebastian
    Johannesson, Sofie
    Wernersson, Lars-Erik
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (12) : 2033 - 2036
  • [12] III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications
    Song, Yi
    Zhang, Chen
    Dowdy, Ryan
    Chabak, Kelson
    Mohseni, Parsian K.
    Choi, Wonsik
    Li, Xiuling
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (03) : 324 - 326
  • [13] Adiabatic 4:2 Compressors Based on 10-nm Gate-All-Around CNTFET for Low-Power Computing
    Fiyuzi, Javad
    Akbar, Reza
    Taheri, Mohammadreza
    Moaiyeri, Mohammad Hossein
    Safaei, Farshad
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2018, 13 (08) : 1222 - 1234
  • [14] Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes
    Kola, Sekhar Reddy
    Li, Yiming
    Chuang, Min-Hui
    Endo, Kazuhiko
    Samukawa, Seiji
    2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM, 2023,
  • [15] Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric
    Negara, Muhammad Adi
    Goel, Niti
    Bauza, Daniel
    Ghibaudo, Gerard
    Hurley, Paul K.
    MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1095 - 1097
  • [16] 30nm Enhancement-mode In0.53Ga0.47As MOSFETs on Si Substrates Grown by MOCVD Exhibiting High Transconductance and Low On-resistance
    Zhou, Xiuju
    Li, Qiang
    Tang, Chak Wah
    Lau, Kei May
    2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2012,
  • [17] Gate-All-Around GaN Nanowire FET as a Potential Transistor at 5 nm Technology for Low-Power Low-Voltage Applications
    Thakur, Rajiv Ranjan
    Chaturvedi, Nidhi
    NANO, 2021, 16 (08)
  • [18] Low-Power Energy-Efficient Hetero-Dielectric Gate-All-Around MOSFETs: Enablers for Sustainable Smart City Technology
    Devi, Ram
    Kaur, Gurpurneet
    Seehra, Ameeta
    Rattan, Munish
    Aggarwal, Geetika
    Short, Michael
    ENERGIES, 2025, 18 (06)
  • [19] HIGH-FREQUENCY TRANSPORT OF 2-DIMENSIONAL HOT-ELECTRONS IN GAAS AND IN0.53GA0.47AS QUANTUM-WELLS AT LOW-TEMPERATURES
    CHATTOPADHYAY, D
    BASU, PP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) : 700 - 705
  • [20] Low Dit high-k/In0.53Ga0.47As Gate Stack, with CET Down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction
    Zadeh, D. Hassan
    Oomine, H.
    Kakushima, K.
    Kataoka, Y.
    Nishiyama, A.
    Sugii, N.
    Wakabayashi, H.
    Tsutsui, K.
    Natori, K.
    Iwai, H.
    2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013,
123