Low-Power and High-Frequency 14-nm In0.53Ga0.47As Vertical Rectangular Gate-All-Around MOSFETs

被引：2

作者：

Khaouani, Mohammed ^{[1
,2
]}

机构：

[1] Aboubekr Belkaid Univ, Dept Elect Engn, Tilimsen 13000, Algeria

[2] Unit Res Mat & Renewable Energies, Tilimsen, Algeria

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2018年 / 19卷 / 05期

关键词：

MOSFETs; GAA; TCAD; DIBL; V-th; SS;

D O I：

10.1007/s42341-018-0046-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a high-mobility 14-nm channel length In0.53Ga0.47As vertical rectangular gate-all-around (GAA) MOSFET that we simulated with Silvaco TCAD in DevEdit 3D and Atlas for using these devices with low power. We obtained a threshold voltage V-th of 25mV; therefore, a subthreshold slope (SS) and drain-induced barrier lowering (DIBL) as low as 78 and 45mV/V have been demonstrated, indicating excellent interface quality and stability. A transconductance (g(m)) equal to 1.5ms/mu m, high frequency of 900GHz for a great InGaAs GAA, record high I-ON/I-OFF of over 2.5x10(6), and minimum I-OFF=0.21 pA/mu m have been obtained. These devices can be used for low-power logic and high-frequency applications.

引用

页码：337 / 343

页数：7

共 25 条

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