共 50 条
- [41] DETERMINATION OF DEPTH OF A P-N JUNCTION USING A SCANNING ELECTRON MICROSCOPE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (10): : 1304 - &
- [42] RADIATIVE RECOMBINATION IN GALLIUM ARSENIDE P-N STRUCTURES WITH P-TYPE REGIONS DOPED WITH GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (05): : 600 - &
- [43] DETERMINATION OF THE RECOMBINATION CONSTANT AND THE DEPTH OF A P-N JUNCTION FROM THE SPECTRAL CHARACTERISTICS OF A PHOTOCELL SOVIET PHYSICS-SOLID STATE, 1961, 2 (08): : 1781 - 1782
- [44] SCANNING ELECTRON-MICROSCOPE CALIBRATION WITH SIMULTANEOUS ELECTRON-PROBE DIAMETER DETERMINATION MEASUREMENT TECHNIQUES USSR, 1994, 37 (06): : 710 - 713
- [45] QUANTITATIVE ELECTRON-PROBE MICROANALYSIS (THE N-RATIO METHOD) JOURNAL OF ANALYTICAL CHEMISTRY OF THE USSR, 1985, 40 (10): : 1418 - 1426
- [46] Extracting Nonradiative Parameters in III-V Semiconductors Using Double Heterostructures on Active p-n Junctions IEEE JOURNAL OF PHOTOVOLTAICS, 2018, 8 (02): : 633 - 639
- [47] ANALYSIS OF STATIC CHARACTERISTICS AND OF PARAMETERS OF PHOTOSENSITIVE STRUCTURES WITH p-n JUNCTIONS. Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1982, 27 (02): : 148 - 155
- [49] COUPLED DEFECT LEVEL RECOMBINATION IN THE P-N JUNCTION JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS, 2011, 62 (06): : 355 - 358