共 50 条
- [21] Formation efficiency of the thermostable recombination centres in irradiated silicon p-n structuresDOKLADY AKADEMII NAUK BELARUSI, 1996, 40 (05): : 49 - 53Korshunov, FPZhdanovich, NEMarchenko, IGTroshchinsky, VT
- [22] DETERMINATION OF RECOMBINATION CONSTANTS FROM SPECTRAL CHARACTERISTIC OF A PHOTOELEMENT WITH A P-N JUNCTIONSOVIET PHYSICS-SOLID STATE, 1960, 2 (02): : 187 - 193SUBASHIEV, VK
- [23] DRIVING OF THE PARAMETERS OF GaAs:Si p-n STRUCTURES BY GIRATRONIC IRRADIATIONJOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2011, 3 (04) : 138 - 149Sukach, G. A.Kidalov, V. V.
- [24] Radiative recombination in a ZnTe p-n junctionJOURNAL OF CRYSTAL GROWTH, 1998, 184 : 1170 - 1174Iodko, VNGribkovskii, VPBelyaeva, AKSuprun-Belevich, YRKetko, ZA
- [25] RECOMBINATION RADIATION OF A P-N JUNCTION IN INASSOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 2036 - &ANISIMOV.IDYUNGERMA.VMKULYMANO.AV
- [26] RADIATIVE RECOMBINATION EFFICIENCIES IN GA(AS,P)-N AND (IN,GA)P-NJOURNAL OF APPLIED PHYSICS, 1976, 47 (01) : 180 - 189KLEIMAN, GG
- [27] RECOMBINATION CURRENTS IN A P-N HETEROJUNCTION DIODEPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (01): : 381 - 390SMITH, DL
- [28] RADIATIVE RECOMBINATION IN SILICON P-N JUNCTIONSPHYSICA STATUS SOLIDI, 1969, 36 (01): : 311 - +MICHAELIS, WPILKUHN, MH
- [29] COMPUTER-AIDED PHASE DETERMINATION BY ELECTRON-PROBE MICROANALYSISSCANNING MICROSCOPY, 1992, 6 (03) : 679 - 684NAGY, P
- [30] ELECTRON-PROBE DETERMINATION OF TRACES OF MODIFYING AGENTS IN SPHEROIDAL GRAPHITEINDUSTRIAL LABORATORY, 1977, 43 (11): : 1537 - 1540BELAI, GEKOLOTILO, EVSHMELEV, YSVUKELICH, SBVOLYUSHKO, KI