ENHANCED DYNAMIC VOLTAGE CLAMPING CAPABILITY OF CLUSTERED IGBT AT TURN-OFF PERIOD

被引：0
|
作者：
Long, Hong Y. [1 ]
Sweet, Mark. R. [1 ]
Narayanan, E. M. Sankara [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S10 2TN, S Yorkshire, England
来源：
FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS | 2016年 / 29卷 / 01期
关键词：
Insulated Gate Bipolar Transistor (IGBT); power semiconductor devices; Clustered IGBT;
D O I：
10.2298/FUEE1601001L
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
One of the critical requirements for high power devices is to have rugged and reliable capability against hash operating conditions. In this paper, we present the dynamic voltage clamping capability of 3.3kV Field Stop Clustered IGBT devices under extreme inductive load condition. It shows that PMOS trench gate CIGBT structure with outstanding performance of fast turn-off time and low over-shoot voltage. Further optimization of current gain of CIGBT structure is analyzed through numerical evaluation. A step further in the safe operating area has been achieved for high voltage devices by CIGBT technology.
引用
收藏
页码：1 / 10
页数：10
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