ENHANCED DYNAMIC VOLTAGE CLAMPING CAPABILITY OF CLUSTERED IGBT AT TURN-OFF PERIOD

被引：0

作者：

Long, Hong Y. ^{[1
]}

Sweet, Mark. R. ^{[1
]}

Narayanan, E. M. Sankara ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S10 2TN, S Yorkshire, England

来源：

FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS | 2016年 / 29卷 / 01期

关键词：

Insulated Gate Bipolar Transistor (IGBT); power semiconductor devices; Clustered IGBT;

D O I：

10.2298/FUEE1601001L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the critical requirements for high power devices is to have rugged and reliable capability against hash operating conditions. In this paper, we present the dynamic voltage clamping capability of 3.3kV Field Stop Clustered IGBT devices under extreme inductive load condition. It shows that PMOS trench gate CIGBT structure with outstanding performance of fast turn-off time and low over-shoot voltage. Further optimization of current gain of CIGBT structure is analyzed through numerical evaluation. A step further in the safe operating area has been achieved for high voltage devices by CIGBT technology.

引用

页码：1 / 10

页数：10

共 50 条

[41] Investigation of the Influence of Temperature on Stress Waves at the Turn-Off Moment in IGBT
Geng, Xuefeng
He, Yunze
Wang, Guangxin
Tang, Longhai
Li, Qiying
Liu, Songyuan
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2023, 72
[42] Robustness test and failure analysis of IGBT modules during turn-off
Urresti-Ibanez, J.
Castellazzi, A.
Piton, M.
Rebollo, J.
Mermet-Guyennet, M.
Ciappa, M.
MICROELECTRONICS RELIABILITY, 2007, 47 (9-11) : 1725 - 1729
[43] General expression for IGBT turn-off loss for switched mode operation
Randall, Ronald H.
Laprade, Alain
Wood, Barry
Electronic Engineering (London), 2000, 72 (879):
[44] Over-current turn-off failure in high voltage IGBT modules under clamped inductive load
Perpina, X.
Serviere, J. F.
Jorda, X.
Hidalgo, S.
Urresti-Ibanez, J.
Rebollo, J.
Mermet-Guyennet, M.
EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9, 2009, : 3481 - +
[45] Modeling turn-off voltage rise in SOI LIGBT
Ettore Napoli
Vasantha Pathirana
Florin Udrea
Journal of Computational Electronics, 2006, 5 : 181 - 186
[46] Novel PFN with current turn-off capability for electric launchers
Spahn, E
Buderer, G
Gauthier-Blum, C
IEEE TRANSACTIONS ON MAGNETICS, 2001, 37 (01) : 398 - 402
[47] GATE TURN-OFF CAPABILITY OF DEPLETION-MODE THYRISTORS
BALIGA, BJ
CHANG, HR
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) : 464 - 466
[48] Modeling turn-off voltage rise in SOI LIGBT
Napoli, Ettore
Pathirana, Vasantha
Udrea, Florin
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2006, 5 (2-3) : 181 - 186
[49] Turn-on Capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor
Liang, Lin
Huang, Alex Q.
Sung, Woongje
Lee, Meng-Chia
Song, Xiaoqing
Peng, Chang
Cheng, Lin
Palmour, John
Scozzie, Charles
WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS, 2015, : 192 - 195
[50] Evaluation of the turn-off transient controllability for high-power IGBT modules
Tan, Kun
Ji, Bing
Wang, Jun
Deng, Wenjuan
Li, Daohui
Wang, Zhiqiang
Liu, Zheng
Cao, Wenping
IET POWER ELECTRONICS, 2022, 15 (07) : 631 - 643

← 1 2 3 4 5 →