CURRENT NOISE IN (111) N-CHANNEL SI-MOSFET AT T=4.2-K

被引：1

作者：

HENDRIKS, EA ^{[1
]}

ZIJLSTRA, RJJ ^{[1
]}

MIDDELHOEK, J ^{[1
]}

机构：

[1] TWENTE UNIV TECHNOL,FAC ELECTROTECH,7500 AE ENSCHEDE,NETHERLANDS

来源：

PHYSICA B & C | 1988年 / 147卷 / 2-3期

关键词：

D O I：

10.1016/0378-4363(88)90288-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：297 / 304

页数：8

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