CURRENT NOISE IN (111) N-CHANNEL SI-MOSFET AT T=4.2-K

被引：1
|
作者：
HENDRIKS, EA [1 ]
ZIJLSTRA, RJJ [1 ]
MIDDELHOEK, J [1 ]
机构：
[1] TWENTE UNIV TECHNOL,FAC ELECTROTECH,7500 AE ENSCHEDE,NETHERLANDS
来源：
PHYSICA B & C | 1988年 / 147卷 / 2-3期
关键词：
D O I：
10.1016/0378-4363(88)90288-4
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：297 / 304
页数：8
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