共 6 条
- [1] FIELD-INDUCED GENERATION RECOMBINATION NOISE IN (100) N-CHANNEL SI-MOSFET AT T=4.2-K .2. EXPERIMENTSPHYSICA B & C, 1988, 147 (2-3): : 291 - 296HENDRIKS, EAZIJLSTRA, RJJ
- [2] CURRENT NOISE IN (111) N-CHANNEL SI-MOSFET AT T=4.2-KPHYSICA B & C, 1988, 147 (2-3): : 297 - 304HENDRIKS, EAZIJLSTRA, RJJMIDDELHOEK, J
- [3] ENERGY RELAXATION OF ELECTRONS IN (100) N-CHANNEL OF A SI-MOSFET .1. BULK PHONON TREATMENTSURFACE SCIENCE, 1974, 46 (01) : 197 - 231KROWNE, CMHOLMKENN.JW
- [4] 1/F NOISE IN (100) NORMAL-CHANNEL SI-MOSFETS FROM T = 4.2-K TO T = 295-KSOLID-STATE ELECTRONICS, 1988, 31 (06) : 1105 - 1111HENDRIKS, EAZIJLSTRA, RJJ
- [5] DIFFUSION AND INTER-VALLEY NOISE IN (100) N-CHANNEL SI-MOSFETS FROM T = 4.2 TO 295 KSOLID-STATE ELECTRONICS, 1988, 31 (02) : 171 - 180HENDRIKS, EAZIJLSTRA, RJJ