ENERGY RELAXATION OF ELECTRONS IN (100) N-CHANNEL OF A SI-MOSFET .1. BULK PHONON TREATMENT

被引：17

作者：

KROWNE, CM ^{[1
]}

HOLMKENN.JW ^{[1
]}

机构：

[1] UNIV CALIF,ELECT SCI & ENGN DEPT,LOS ANGELES,CA 90024

来源：

SURFACE SCIENCE | 1974年 / 46卷 / 01期

关键词：

D O I：

10.1016/0039-6028(74)90249-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：197 / 231

页数：35

共 8 条

[1] ENERGY RELAXATION OF ELECTRONS IN (100) N-CHANNEL OF A SI-MOSFET .2. SURFACE PHONON TREATMENT
KROWNE, CM
HOLMKENN.JW
SURFACE SCIENCE, 1974, 46 (01) : 232 - 250
[2] Simulation of electron heating in n-channel submicron Si-MOSFET's
Borzdov, VM
Galenchik, VO
Komarov, FF
Mulyarchik, SG
Zhevnyak, OG
1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2, 1997, : 489 - 491
[3] FIELD-INDUCED GENERATION RECOMBINATION NOISE IN (100) N-CHANNEL SI-MOSFET AT T=4.2-K .1. THEORY
HENDRIKS, EA
ZIJLSTRA, RJJ
PHYSICA B & C, 1988, 147 (2-3): : 282 - 290
[4] CURRENT NOISE IN (111) N-CHANNEL SI-MOSFET AT T=4.2-K
HENDRIKS, EA
ZIJLSTRA, RJJ
MIDDELHOEK, J
PHYSICA B & C, 1988, 147 (2-3): : 297 - 304
[5] FIELD-INDUCED GENERATION RECOMBINATION NOISE IN (100) N-CHANNEL SI-MOSFET AT T=4.2-K .2. EXPERIMENTS
HENDRIKS, EA
ZIJLSTRA, RJJ
PHYSICA B & C, 1988, 147 (2-3): : 291 - 296
[6] THEORY OF VALLEY SPLITTING IN AN N-CHANNEL (100) INVERSION LAYER OF SI .1. FORMULATION BY EXTENDED ZONE EFFECTIVE MASS THEORY
OHKAWA, FJ
UEMURA, Y
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (03) : 907 - 916
[7] Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
Atmaca, G.
Ardali, S.
Narin, P.
Kutlu, E.
Lisesivdin, S. B.
Malin, T.
Mansurov, V.
Zhuravlev, K.
Tiras, E.
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 659 : 90 - 94
[8] ELECTRON POWER LOSS IN THE (100) N-CHANNEL OF A SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR .2. INTERSUBBAND PHONON-SCATTERING
KROWNE, CM
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2455 - 2467

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