ANNEALING-RELATED ELECTRICAL AND PIEZORESISTIVE PROPERTIES OF B-IMPLANTED AND AS-IMPLANTED LPCVD SILICON FILMS

被引：0
|
作者：
JEANJEAN, P
SICART, J
ROBERT, JL
LEBERRE, M
PINARD, P
CONEDERA, V
机构：
[1] INSA,PHYS MAT LA 358,F-69621 VILLEURBANNE,FRANCE
[2] CNRS,AUTOMAT & ANAL SYST LAB,F-31077 TOULOUSE,FRANCE
来源：
JOURNAL DE PHYSIQUE III | 1993年 / 3卷 / 01期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the electrical properties of polycrystalline silicon thin films implanted with arsenic or boron ions. Two types of post-implantation annealing have been performed on the samples : a conventional thermal annealing (CTA) and a rapid thermal annealing (RTA). We find that RTA improves the electrical properties. Measurements of gauge factors have been carried out on both films. We conclude that RTA can be applied successfully in thin film silicon integrated sensor technology.
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页码：47 / 53
页数：7
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