user

ANNEALING-RELATED ELECTRICAL AND PIEZORESISTIVE PROPERTIES OF B-IMPLANTED AND AS-IMPLANTED LPCVD SILICON FILMS

被引：0
|
作者：
JEANJEAN, P
SICART, J
ROBERT, JL
LEBERRE, M
PINARD, P
CONEDERA, V
机构：
[1] INSA,PHYS MAT LA 358,F-69621 VILLEURBANNE,FRANCE
[2] CNRS,AUTOMAT & ANAL SYST LAB,F-31077 TOULOUSE,FRANCE
来源：
JOURNAL DE PHYSIQUE III | 1993年 / 3卷 / 01期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the electrical properties of polycrystalline silicon thin films implanted with arsenic or boron ions. Two types of post-implantation annealing have been performed on the samples : a conventional thermal annealing (CTA) and a rapid thermal annealing (RTA). We find that RTA improves the electrical properties. Measurements of gauge factors have been carried out on both films. We conclude that RTA can be applied successfully in thin film silicon integrated sensor technology.
引用
收藏
页码：47 / 53
页数：7
相关论文
共 50 条
  • [41] ION-BEAM-INDUCED EPITAXY IN B-IMPLANTED SILICON PREAMORPHIZED WITH GE IONS
    KURIYAMA, K
    TAKAHASHI, H
    SHIMOYAMA, K
    HAYASHI, N
    HASEGAWA, M
    KOBAYASHI, N
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 994 - 997
  • [42] Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films
    Kang, MK
    Matsui, T
    Kuwano, H
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1996, 7 (06) : 451 - 454
  • [43] Optical and electrical properties of LPCVD silicon oxynitride films on silicon
    Szekeres, A
    Alexandrova, S
    Modreanu, M
    Cosmin, P
    Gartner, M
    [J]. VACUUM, 2001, 61 (2-4) : 205 - 209
  • [44] Reverse annealing of arsenic-implanted low-pressure chemical vapor deposition (LPCVD) amorphous-silicon films
    Tsai, Meng-Jin
    Wang, Fang-Shin
    Cheng, Huang-Chung
    [J]. Japanese Journal of Applied Physics, Part 2: Letters, 1994, 33 (9 A):
  • [45] ELECTRICAL CHARACTERISTICS AND CONTACT RESISTANCE OF B+-IMPLANTED AND BF2+-IMPLANTED SILICON DIODES WITH FURNACE AND RAPID THERMAL ANNEALING
    SIMARDNORMANDIN, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) : 1354 - 1357
  • [46] Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix
    Cen, Z. H.
    Chen, T. P.
    Ding, L.
    Liu, Y.
    Yang, M.
    Wong, J. I.
    Liu, Z.
    Liu, Y. C.
    Fung, S.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (02)
  • [47] CW LASER ANNEALING OF BORON-IMPLANTED AND ARSENIC-IMPLANTED SILICON - ELECTRICAL-PROPERTIES, CRYSTALLINE-STRUCTURE AND LIMITATIONS
    GAT, A
    MAGEE, TJ
    PENG, J
    DELINE, VR
    EVANS, CA
    [J]. SOLID STATE TECHNOLOGY, 1979, 22 (11) : 59 - 68
  • [48] PULSED ELECTRON-BEAM ANNEALING OF AS AND B IMPLANTED SILICON
    BARBIER, D
    CHEMISKY, G
    GROB, JJ
    LAUGIER, A
    SIFFERT, P
    STUCK, R
    [J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 209 - 214
  • [49] ANOMALOUS LOW-TEMPERATURE DOPANT DIFFUSIVITY AND DEFECT STRUCTURE IN SB-IMPLANTED AND SB/B-IMPLANTED ANNEALED SILICON SAMPLES
    ARMIGLIATO, A
    ROMANATO, F
    DRIGO, A
    CARNERA, A
    BRIZARD, C
    REGNARD, JR
    ALLAIN, JL
    [J]. PHYSICAL REVIEW B, 1995, 52 (03): : 1859 - 1873
  • [50] Comprehensive Characterization of Dual Implanted Silicon after Electrical Activation Annealing
    Yoo, Woo Sik
    Jeon, Bong Suk
    Kim, Sang Deok
    Ishigaki, Toshikazu
    Kang, Kitaek
    [J]. SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6, 2016, 72 (04): : 199 - 209
12345