RAPID ISOTHERMAL ANNEALING OF AS-IMPLANTED, P-IMPLANTED, AND B-IMPLANTED SILICON

被引：55
|
作者：
WILSON, SR [1 ]
PAULSON, WM [1 ]
GREGORY, RB [1 ]
HAMDI, AH [1 ]
MCDANIEL, FD [1 ]
机构：
[1] N TEXAS STATE UNIV,DEPT PHYS,DENTON,TX 76203
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 12期
关键词：
D O I：
10.1063/1.333034
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4162 / 4170
页数：9
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