RAPID THERMAL ANNEALING OF AS-IMPLANTED SILICON

被引：0
|
作者：
HO, CC
KWOR, R
JONES, K
ARAUJO, C
机构：
[1] UNIV NOTRE DAME,DEPT ELECT & COMP ENGN,NOTRE DAME,IN 46556
[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401
[3] UNIV COLORADO,COLORADO SPRINGS,CO 80933
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C330 / C330
页数：1
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