Formation of Submicron Doped Layers in Silicon Using Pulsed Solid State Diffusion

被引：0

作者：

Bonchik, A. Yu. ^{[1
]}

Dhaul, A. ^{[2
]}

Kiyak, S. G. ^{[1
]}

Lubnin, E. N. ^{[1
]}

Mikhailova, G. N. ^{[1
]}

Prokhorov, A. M. ^{[1
]}

Seferov, A. S. ^{[1
]}

Fattakhov, Ya. V. ^{[1
]}

Khaibullin, I. B. ^{[1
]}

Chander, R. ^{[1
]}

Chankin, A. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Gen Phys, Moscow 117333, Russia

[2] Solid State Phys Lab, Delhi, India

来源：

LASER PHYSICS | 1992年 / 2卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The results of studies of pulsed solid-state boron diffusion into silicon silicon wafer with boron-covered surface are presented. Samples were heated either by CO(2)-laser or flash lamp emission. Pure boron, boron oxide and boron-containing emulsion were used to cover the sample's surface and thereby produce a surface source of doping element, Pulsed solid-state diffusion of boron into silicon occurred both under laser and flash lamp irradiation. All three types of sample coverage yield ultrathin doped layers.

引用

页码：190 / 193

页数：4

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