共 50 条
- [1] IMPURITY DIFFUSION IN SEMICONDUCTORS UNDER PULSED LASER ANNEALING CONDITIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (10): : 1141 - 1143
- [2] DIFFUSION OF IMPURITIES FROM IMPLANTED SILICON LAYERS BY RAPID THERMAL ANNEALING PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 110 (02): : K61 - K65
- [3] DIFFUSION OF ZINC DURING LASER ANNEALING OF IMPLANTED SILICON LAYERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (07): : 776 - 779
- [4] ANNEALING OF IMPLANTED LAYERS OF SILICON IN THE PLASMA OF A PULSED GAS-DISCHARGE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (06): : 712 - 713
- [6] Dielectric properties of implanted silicon layers: Influence of rapid thermal annealing NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 197 (1-2): : 60 - 66
- [7] ANNEALING OF IMPLANTED LAYERS OF SILICON BY PULSED CO2-LASER RADIATION DOKLADY AKADEMII NAUK SSSR, 1981, 257 (05): : 1110 - 1113
- [8] DISTRIBUTION OF AN ION-IMPLANTED IMPURITY IN SILICON AFTER REPEATED PULSED ELECTRON ANNEALING SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (02): : 218 - 219
- [10] Sublimation and diffusion of arsenic implanted into silicon at rapid electron beam annealing 1600, Publ by Elsevier Science Publ BV (North-Holland), Amsterdam, Neth (55): : 1 - 4