SUPPRESSION OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON BY ION-IMPLANTATION OF GALLIUM AND ARSENIC

被引：0

作者：

AKIMCHENKO, IP ^{[1
]}

VAVILOV, VS ^{[1
]}

DYMOVA, NN ^{[1
]}

KRASNOPEVTSEV, VV ^{[1
]}

RODINA, AA ^{[1
]}

UMKINEDIN, DI ^{[1
]}

机构：

[1] MOSCOW RARE MET IND RES INST,MOSCOW,USSR

来源：

JETP LETTERS | 1981年 / 33卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：431 / 434

页数：4

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