SUPPRESSION OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON BY ION-IMPLANTATION OF GALLIUM AND ARSENIC

被引：0
|
作者：
AKIMCHENKO, IP [1 ]
VAVILOV, VS [1 ]
DYMOVA, NN [1 ]
KRASNOPEVTSEV, VV [1 ]
RODINA, AA [1 ]
UMKINEDIN, DI [1 ]
机构：
[1] MOSCOW RARE MET IND RES INST,MOSCOW,USSR
来源：
JETP LETTERS | 1981年 / 33卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：431 / 434
页数：4
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