BIPOLAR NPN TRANSISTOR WITH REDUCED LOW CURRENT BETA FALLOFF

被引：1
|
作者：
HANSELL, GL
FONSTAD, CG
机构：
[1] MIT,LEXINGTON,MA 02173
[2] MIT,CAMBRIDGE,MA 02139
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 09期
关键词：
D O I：
10.1109/T-ED.1977.18934
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1200 / 1201
页数：2
相关论文
共 50 条
  • [31] NPN aided fast switching insulated gate bipolar transistor with a p-buffer layer
    Wang, Chunzao
    Zhang, Bin
    IEICE ELECTRONICS EXPRESS, 2014, 11 (13):
  • [32] Study on Total Ionize Dose Irradiation Damages of Silicon Epitaxial Planar NPN Bipolar Transistor
    Peng C.
    Lei Z.
    Zhang H.
    Zhang Z.
    He Y.
    Yuanzineng Kexue Jishu/Atomic Energy Science and Technology, 2022, 56 (10): : 2187 - 2194
  • [33] A noise current generator on the base of a bipolar transistor
    Leont'ev, G.E.
    Pribory i Tekhnika Eksperimenta, 1993, (04): : 99 - 102
  • [34] Fabrication of horizontal current bipolar transistor (HCBT)
    Suligoj, T
    Koricic, M
    Biljanovic, P
    Wang, KL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (07) : 1645 - 1651
  • [35] Radiation Degradation of Bipolar Transistor Current Gain
    Miskiewicz, S. A.
    Komarov, A. F.
    Komarov, F. F.
    Zayats, G. M.
    Soroka, S. A.
    ACTA PHYSICA POLONICA A, 2017, 132 (02) : 288 - 290
  • [36] CURRENT TRANSFER RATIO OF A BIPOLAR JUNCTION TRANSISTOR
    CHATTOPADHYAYA, SK
    ARORA, VP
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1972, 10 (11) : 808 - 810
  • [37] The current gain of bipolar transistor in the IGBT measurement
    Parnklang, J
    Niemcharoen, S
    Yardsamer, S
    IEEE 2000 TENCON PROCEEDINGS, VOLS I-III: INTELLIGENT SYSTEMS AND TECHNOLOGIES FOR THE NEW MILLENNIUM, 2000, : 445 - 448
  • [38] HIGH-FREQUENCY LOW CURRENT GAALAS-GAAS BIPOLAR-TRANSISTOR
    ANKRI, D
    SCAVENNEC, A
    BESOMBES, C
    COURBET, C
    HELIOT, F
    RIOU, J
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1247 - 1247
  • [39] Ideal Gummel curves simulation of high current gain vertical NPN BIMOS transistor
    Galy, P
    Berland, V
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1996, 80 (06) : 717 - 726
  • [40] TRIPLE ION-IMPLANTATION TECHNIQUE FOR FORMATION OF SHALLOW NPN BIPOLAR-TRANSISTOR STRUCTURES IN SILICON
    TSAUR, BY
    WOODHOUSE, JD
    APPLIED PHYSICS LETTERS, 1984, 44 (10) : 1005 - 1007
12345