EPITAXIAL SILICON LAYERS OBTAINED BY SUBLIMATION IN VACUO

被引：0

作者：

POSTNIKO.VV

OVSYANNI.MI

LOGINOVA, RG

RUBTSOVA, RA

SERGIEVS.TN

TOLOMASO.VA

机构：

来源：

DOKLADY AKADEMII NAUK SSSR | 1967年 / 175卷 / 04期

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D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：817 / &

共 50 条

[1] GALLIUM-DOPED EPITAXIAL LAYERS OF SILICON OBTAINED BY SUBLIMATION IN A VACUUM
GUGIN, VA
POSTNIKOV, VV
KOMRAKOVA, TD
RUBTSOVA, RA
[J]. INORGANIC MATERIALS, 1982, 18 (01): : 1 - 3
[2] GROWTH-KINETICS OF EPITAXIAL LAYERS OF SILICON-CARBIDE OBTAINED BY SUBLIMATION IN VACUUM
TAIROV, YM
TARANETS, VA
TSVETKOV, VF
[J]. INORGANIC MATERIALS, 1978, 14 (08): : 1122 - 1125
[3] DIFFUSION OF STIBIUM IN EPITAXIAL SILICON OBTAINED BY SUBLIMATION IN VACUUM
USKOV, VA
SVETLOV, SP
[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1972, (07): : 145 - &
[4] Gallium doped silicon epitaxial layers grown by sublimation
N.I Lobachevskii Nizhnii Novgorod, State Univ, Nizhnii Novgorod, Russia
[J]. Surf Invest X Ray Synchrotron Neutron Techniq, 9 (1197-1200):
[5] EPITAXIAL FILMS OF N-TYPE SILICON OBTAINED BY VACUUM SUBLIMATION
TOLOMASOV, VA
ABROSIMO.LN
GORSHENI.GN
[J]. SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1971, 15 (06): : 1076 - +
[6] GROWTH OF EPITAXIAL LAYERS OF SILICON BY SUBLIMATION THROUGH THIN ALLOY ZONES
FILBY, JD
NIELSEN, S
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (01): : 81 - &
[7] IMPURITY DISTRIBUTION IN EPITAXIAL LAYERS OF SILICON OBTAINED BY SILANE PYROLYSIS
GRANKOV, IV
GUREVICH, VM
IVANOV, LS
MOSKALEV, LL
[J]. INORGANIC MATERIALS, 1982, 18 (03): : 279 - 282
[8] EPITAXIAL GROWTH OF SILICON BY VACUUM SUBLIMATION
HANDELMAN, ET
POVILONIS, EI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) : 201 - 206
[9] EPITAXIAL GROWTH OF SILICON BY VACUUM SUBLIMATION
HANDELMAN, ET
POVILONIS, EI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) : C201 - C201
[10] EPITAXIAL GROWTH OF SILICON BY VACUUM SUBLIMATION
NANNICHI, Y
[J]. NATURE, 1963, 200 (491) : 1087 - &

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