共 50 条
- [23] N+N DELINEATION IN SILICON JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 1002 - 1003
- [25] EFFECT OF GAMMA-RADIATION ON ALUMINUM-N-SILICON INTERFACE PROPERTIES UKRAINSKII FIZICHESKII ZHURNAL, 1983, 28 (02): : 259 - 263
- [27] ELECTRICAL-PROPERTIES OF A P-N-N+ STRUCTURE FORMED IN SILICON-CARBIDE BY IMPLANTATION OF ALUMINUM IONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (09): : 1017 - 1020
- [28] EFFECT OF PHOSPHOROUS CONCENTRATION OF n + -TYPE SILICON ON THE THICKNESS AND THE ELECTRICAL PROPERTY OF REGROWTH LAYER FORMED WITH BRAZING BETWEEN n + -TYPE SILICON AND ALUMINUM. Nippon Kinzoku Gakkai-si, 1984, 48 (03): : 333 - 338
- [29] Dichlorodihydro(N,N,N′,N′, -Teraethyl-1,2-Ethanediamine-N,N′)Silicon INORGANIC SYNTHESES, VOL 32, 1998, 32 : 294 - 297
- [30] CRYSTAL STRUCTURE OF ALUMINUM HYDRIDE-N,N,N],N]-TETRAMETHYLETHYLENEDIAMINE ADDUCT ACTA CRYSTALLOGRAPHICA, 1964, 17 (12): : 1573 - &