INVESTIGATION ON FORMATION OF OHMIC CONTACT OF ALUMINUM SOLDER TO N+ TYPE SILICON

被引：0
|
作者：
ONUKI, J
SOENO, K
机构：
来源：
JOURNAL OF THE JAPAN INSTITUTE OF METALS | 1981年 / 45卷 / 08期
关键词：
D O I：
10.2320/jinstmet1952.45.8_841
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：841 / 846
页数：6
相关论文
共 50 条
  • [1] OHMIC ALUMINUM-N-TYPE SILICON CONTACT
    MATLOW, SL
    RALPH, EL
    JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 541 - 543
  • [2] Investigation of morphology of porous silicon formed on N+ type silicon
    INFM Unità di Roma, Dipartimento di Ingegneria Elettronica, Università La Sapienza, Via Eudossiana 18, 00184 Roma, Italy
    不详
    Journal of Porous Materials, 2000, 7 (01) : 23 - 26
  • [3] Investigation of morphology of porous silicon formed on N+ type silicon
    Lamedica, G
    Balucani, M
    Bondarenko, V
    Franchina, L
    Dolgyi, L
    Yakovtseva, V
    Ferrari, A
    JOURNAL OF POROUS MATERIALS, 2000, 7 (1-3) : 23 - 26
  • [4] Investigation of Morphology of Porous Silicon Formed on N+ Type Silicon
    G. Lamedica
    M. Balucani
    V. Bondarenko
    L. Franchina
    L. Dolgyi
    V. Yakovtseva
    A. Ferrari
    Journal of Porous Materials, 2000, 7 : 23 - 26
  • [5] Ohmic contact formation on n-type Ge
    Lieten, R. R.
    Degroote, S.
    Kuijk, M.
    Borghs, G.
    APPLIED PHYSICS LETTERS, 2008, 92 (02)
  • [6] METAL-N-TYPE SEMICONDUCTOR OHMIC CONTACT WITH A SHALLOW N+ SURFACE-LAYER
    POPOVIC, RS
    SOLID-STATE ELECTRONICS, 1978, 21 (09) : 1133 - 1138
  • [7] ALUMINUM-SILICON OHMIC CONTACT ON SHALLOW N+-P JUNCTIONS
    FINETTI, M
    OSTOJA, P
    SOLMI, S
    SONCINI, G
    SOLID-STATE ELECTRONICS, 1980, 23 (03) : 255 - &
  • [8] A NONALLOYED OHMIC CONTACT FORMATION ON N-TYPE GAAS
    DUTTA, R
    LAHAV, A
    ROBBINS, M
    LAMBRECHT, VG
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (06) : 3136 - 3140
  • [9] ALLOY BARRIER OHMIC CONTACTS FOR ALUMINUM TO N-TYPE SILICON
    MAY, JE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : C242 - &
  • [10] Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN
    Luther, BP
    Mohney, SE
    Jackson, TN
    Khan, MA
    Chen, Q
    Yang, JW
    APPLIED PHYSICS LETTERS, 1997, 70 (01) : 57 - 59
12345